Transparent conductive zinc oxide film, process for production thereof, and use thereof

Patent metadata

Field	Value
Publication number	US-9024176-B2
Application number	US-201113639347-A
Country	US
Kind code	B2
Filing date	Apr 7, 2011
Priority date	Apr 8, 2010
Publication date	May 5, 2015
Grant date	May 5, 2015

Abstract

A transparent conductive zinc oxide based film according to the present invention contains Ti, Al and Zn in such a proportion that satisfies the following formulae (1), (2) and (3) in terms of atomic ratio, and has a plurality of surface textures different in size on a surface, wherein a center-line average surface roughness Ra of the surface of the transparent conductive film is 30 nm to 200 nm, and an average value of widths of the surface textures is 100 nm to 10 μm.

0.001≦Ti/(Zn+Al+Ti)≦0.079.  (1)

0.001≦Al/(Zn+Al+Ti)≦0.079  (2)

0.010≦(Ti+Al)/(Zn+Al+Ti)≦0.080  (3)

First claim

The invention claimed is:

1. A transparent conductive zinc oxide based film, containing Ti, Al and Zn in such a proportion that satisfies formulae (1), (2) and (3) in terms of atomic ratio, and having a plurality of surface textures different in size on a surface,
a center-line average roughness Ra of the surface being 30 nm to 200 nm, and
an average value of widths of the surface textures being 100 nm to 10 μm, wherein the formulae are:
0.001≦Ti/(Zn+Al+Ti)≦0.079,  (1)

0.001≦Al/(Zn+Al+Ti)≦0.079, and  (2)

0.010≦(Ti+Al)/(Zn+Al+Ti)≦0.080.  (3)

2. The transparent conductive film according to claim 1 , wherein a surface area of the transparent conductive film is 101 μm 2 to 200 μm 2 per region of 10 μm×10 μm.

3. The transparent conductive film according to claim 1 , wherein a shape of the surface textures is a concave lens-like shape.

4. The transparent conductive film according to claim 3 , wherein
the surface textures comprise first textures having a concave lens-like shape and second textures having a concave lens-like shape,
the second textures are present inside the first textures,
an average value of widths of the second textures is smaller than an average value of widths of the first textures, and
an average value of ratios of widths of the surface textures to depths of the surface textures is 1 to 5.

5. The transparent conductive film according to claim 1 , wherein
a shape of the surface textures is a concave lens-like shape,
an average value of ratios of widths of the surface textures to depths of the surface textures is 1 to 5, and
at least part of the plurality of surface textures share a boundary with each other and are randomly arranged.

6. A method for production of the transparent conductive film according to claim 1 , comprising:
forming a film on a heated base material by a sputtering method using a zinc oxide based target containing Ti, Al and Zn in such a proportion that satisfies formulae (1), (2) and (3) in terms of atomic ratio; and
subjecting a surface of the formed film to a surface treatment, wherein the formulae are:
0.001≦Ti/(Zn+Al+Ti)≦0.079,  (1)

0.001≦Al/(Zn+Al+Ti)≦0.079, and  (2)

0.010≦(Ti+Al)/(Zn+Al+Ti)≦0.080, and  (3)

wherein a temperature of the heated based material is 250° C. or lower.

7. The method for production according to claim 6 , wherein the surface treatment is wet etching using an acid whose hydrogen ion concentration is 0.001 to 0.20 mol/l.

8. The method of claim 6 , wherein a temperature of the heated base material is 200° C. or lower.

9. A substrate having a base material, and the transparent conductive film according to claim 1 arranged on the base material.

10. An electron device or optical device comprising the substrate according to claim 9 .

11. A photoelectric conversion device comprising the substrate according to claim 9 .

12. A solar cell having the transparent conductive film according to claim 1 .

13. A transparent conductive zinc oxide based film, produced by a process comprising:
forming a film on a heated base material by a sputtering method using a zinc oxide based target containing Ti, Al and Zn in such a proportion that satisfies formulae (1), (2) and (3) in terms of atomic ratio; and
subjecting a surface of the formed film to a surface treatment, wherein the formulae are:
0.001≦Ti/(Zn+Al+Ti)≦0.079,  (1)

0.001≦Al/(Zn+Al+Ti)≦0.079, and  (2)

0.010≦(Ti+Al)/(Zn+Al+Ti)≦0.080, and  (3)

wherein a temperature of the heated based material is 250° C. or lower.

14. The transparent conductive zinc oxide based film produced by a process of claim 13 , wherein a temperature of the heated base is 200° C. or lower.

Assignees

• Akiike Ryo
• Kuramochi Hideto
• Iigusa Hitoshi
• Tosoh Corp

Inventors

• Akiike Ryo
• Kuramochi Hideto
• Iigusa Hitoshi

Classifications

• H10F77/169

  Thin semiconductor films on metallic or insulating substrates · CPC title

• H10F77/707

  of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate · CPC title

• C23C14/5873 Primary

  Removal of material · CPC title

• C23C14/086

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title

• Y10T428/24355

  Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] · CPC title