Oxide superconductor, oriented oxide thin film, and method for manufacturing oxide superconductor

US9023764B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9023764-B2
Application numberUS-201313766994-A
CountryUS
Kind codeB2
Filing dateFeb 14, 2013
Priority dateMar 23, 2012
Publication dateMay 5, 2015
Grant dateMay 5, 2015

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Abstract

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According to one embodiment, an oxide superconductor includes an oriented superconductor layer and an oxide layer. The oriented superconductor layer contains fluorine at 2.0×10 16 -5.0×10 19 atoms/cc and carbon at 1.0×10 18 -5.0×10 20 atoms/cc. The superconductor layer contains in 90% or more a portion oriented along c-axis with an in-plane orientation degree (Δφ) of 10 degrees or less, and contains a LnBa 2 Cu 3 O 7-x superconductor material (Ln being yttrium or a lanthanoid except cerium, praseodymium, promethium, and lutetium). The oxide layer is provided in contact with a lower surface of the superconductor layer and oriented with an in-plane orientation degree (Δφ) of 10 degrees or less with respect to one crystal axis of the superconductor layer. Area of a portion of the lower surface of the superconductor layer in contact with the oxide layer is 0.3 or less of area of a region directly below the superconductor layer.

First claim

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What is claimed is: 1. An oxide superconductor comprising: an oriented superconductor layer containing fluorine at 2.0×10 16 -5.0×10 19 atoms/cc and carbon at 1.0×10 18 -5.0×10 20 atoms/cc, containing in 90% or more a portion oriented along c-axis with an in-plane orientation degree (Δφ) of 10 degrees or less, and containing a LnBa 2 Cu 3 O 7-x superconductor material (wherein Ln being yttrium (Y) or a lanthanoid except cerium (Ce), praseodymium (Pr), promethium (Pm), and lutetium (Lu); and an oxide layer provided in contact with a lower surface of the oriented superconductor layer and oriented with an in-plane orientation degree (Δφ) of 10 degrees or less with respect to one crystal axis of the oriented superconductor layer, area of a portion of the lower surface of the oriented superconductor layer in contact with the oxide layer being 0.3 or less of area of a region directly below the oriented superconductor layer. 2. The superconductor according to claim 1 , wherein the oxide layer includes a monocrystal of lanthanum aluminate (LaAlO 3 ). 3. The superconductor according to claim 1 , wherein in the lower surface of the oriented superconductor layer, a metal layer is in contact with a portion other than the portion in contact with the oxide layer. 4. The superconductor according to claim 3 , wherein the metal layer contains platinum. 5. The superconductor according to claim 1 , wherein the oxide layer includes a ceramic fiber. 6. The superconductor according to claim 1 , wherein thickness of a portion of the oriented superconductor layer other than directly above the portion in contact with the oxide layer is 1 micrometer or more. 7. The superconductor according to claim 5 , wherein aspect ratio of width to thickness of the fiber is 1:5-1:30. 8. The superconductor according to claim 5 , wherein the fiber is placed on a diffusion preventing layer provided on a base material. 9. The superconductor according to claim 5 , wherein the fiber is oriented with an in-plane orientation degree (Δφ) of 2 degrees or less. 10. The superconductor according to claim 1 , wherein the oriented superconductor layer contains DyBa 2 Cu 3 O 7-x . 11. The superconductor according to claim 1 , wherein an unoriented layer in contact with a portion of the lower surface of the oriented superconductor layer other than the portion in contact with the oxide layer contains a material identical to a material contained in the oriented superconductor layer. 12. The superconductor according to claim 8 , wherein the diffusion preventing layer contains fluoride. 13. An oriented oxide thin film comprising: a first oxide layer containing fluorine at 2.0×10 16 -5.0×10 19 atoms/cc and carbon at 1.0×10 18 -5.0×10 20 atoms/cc and containing in 90% or more a portion oriented with an in-plane orientation degree (Δφ) of 10 degrees or less; and a second oxide layer provided in contact with a lower surface of the first oxide layer and oriented with an in-plane orientation degree (Δφ) of 10 degrees or less with respect to one crystal axis of the first oxide layer, area of a portion of the lower surface of the first oxide layer in contact with the second oxide layer being 0.3 or less of area of a region directly below the first oxide layer. 14. A method for manufacturing an oxide superconductor, comprising: forming a gel film by forming an oriented portion in a foundation and exposing the oriented portion and a portion other than the oriented portion to a solution containing metal trifluoroacetate, the gel film being formed on the foundation and containing metal and fluoride contained in the metal trifluoroacetate; and forming an oriented superconductor layer by heat treating the foundation, the oriented superconductor layer having one crystal axis oriented with the oriented portion on the oriented portion and on the portion other than the oriented portion. 15. The method according to claim 14 , wherein the oriented portion is made of a monocrystal of lanthanum aluminate (LaAlO 3 ). 16. The method according to claim 14 , wherein the oriented portion is made of a ceramic fiber. 17. The method according to claim 14 , wherein the portion other than the oriented portion is a diffusion preventing layer containing oxide. 18. The method according to claim 14 , wherein in the forming a gel film, the oriented portion is formed on the foundation by placing an orientation seed sheet including a binder containing an organic component and a plurality of orientation seeds on the foundation and then removing the binder. 19. The method according to claim 18 , wherein the orientation seed sheet is formed by including the orientation seeds in the binder to form a narrow wire. 20. The method according to claim 14 , wherein the portion other than the oriented portion is a metal layer.

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What does patent US9023764B2 cover?
According to one embodiment, an oxide superconductor includes an oriented superconductor layer and an oxide layer. The oriented superconductor layer contains fluorine at 2.0×10 16 -5.0×10 19 atoms/cc and carbon at 1.0×10 18 -5.0×10 20 atoms/cc. The superconductor layer contains in 90% or more a portion oriented along c-axis with an in-plane orientation degree (Δφ) of 10 degrees or less, and c…
Who is the assignee on this patent?
Toshiba Kk
What technology area does this patent fall under?
Primary CPC classification H01L39/128. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 05 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).