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Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light
US9023740B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9023740-B2 |
| Application number | US-201313914698-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 11, 2013 |
| Priority date | Jun 15, 2012 |
| Publication date | May 5, 2015 |
| Grant date | May 5, 2015 |
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Abstract
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A surface of a semiconductor wafer with a gate of a high dielectric constant film formed thereon is heated to a target temperature for a short time by irradiating the surface with a flash of light. This promotes the crystallization of the high dielectric constant film while suppressing the growth of an underlying silicon dioxide film. Subsequently, the temperature of the semiconductor wafer subjected to the flash heating is maintained at an annealing temperature by irradiating the semiconductor wafer with light from halogen lamps. An annealing process after the flash heating is performed in an atmosphere of a gas mixture of hydrogen gas and nitrogen gas. The annealing process is performed on the semiconductor wafer in the atmosphere of the hydrogen-nitrogen gas mixture, so that defects present near the interfaces of the high dielectric constant film are eliminated by hydrogen termination.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of irradiating a substrate with a high dielectric constant film formed thereon with light to heat the substrate, thereby promoting the crystallization of said high dielectric constant film, said method comprising the steps of: (a) irradiating a surface of the substrate with said high dielectric constant film formed thereon with a flash of light from a flash lamp to heat the surface of said substrate including said high dielectric constant film to a…
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Electricity · mapped topic
Electricity · mapped topic
- H10P34/422Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9023740B2 cover?
- A surface of a semiconductor wafer with a gate of a high dielectric constant film formed thereon is heated to a target temperature for a short time by irradiating the surface with a flash of light. This promotes the crystallization of the high dielectric constant film while suppressing the growth of an underlying silicon dioxide film. Subsequently, the temperature of the semiconductor wafer sub…
- Who is the assignee on this patent?
- Dainippon Screen Mfg, Screen Holdings Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P34/422. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 05 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).