Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same
US-2015380237-A1 · Dec 31, 2015 · US
Compound semiconductor growth using ion implantation
US9023722B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9023722-B2 |
| Application number | US-201213470015-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 11, 2012 |
| Priority date | May 13, 2011 |
| Publication date | May 5, 2015 |
| Grant date | May 5, 2015 |
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Abstract
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A workpiece is implanted to affect growth of a compound semiconductor, such as GaN. Implanted regions of a workpiece increase, reduce, or prevent growth of this compound semiconductor. Combinations of implants may be performed to cause increased growth in certain regions of the workpiece, such as between regions where growth is reduced. Growth also may be reduced or prevented at the periphery of the workpiece.
First claim
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What is claimed is: 1. A method of workpiece processing comprising: selecting a first species of ion such that said first species reduces a rate of compound semiconductor growth on regions in a workpiece implanted with said first species; implanting a first plurality of implanted regions in a workpiece with said first species using a mask disposed above and a distance from said workpiece; and growing a compound semiconductor on said workpiece after said implanting, w…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9023722B2 cover?
- A workpiece is implanted to affect growth of a compound semiconductor, such as GaN. Implanted regions of a workpiece increase, reduce, or prevent growth of this compound semiconductor. Combinations of implants may be performed to cause increased growth in certain regions of the workpiece, such as between regions where growth is reduced. Growth also may be reduced or prevented at the periphery o…
- Who is the assignee on this patent?
- Evans Morgan D, Ruffell Simon, Varian Semiconductor Equipment
- What technology area does this patent fall under?
- Primary CPC classification H10P14/2921. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 05 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).