Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
3D transistor channel mobility enhancement
US9023697B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9023697-B2 |
| Application number | US-201313962322-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 8, 2013 |
| Priority date | Aug 8, 2013 |
| Publication date | May 5, 2015 |
| Grant date | May 5, 2015 |
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Abstract
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A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a semiconductor structure, comprising: forming a plurality of fins substantially parallel to each other on a top surface of a semiconductor substrate, a gate positioned perpendicular and on top of the plurality of fins, a first portion of each of the plurality of fins being under the gate forming a channel region, and a second portion of each of the fins not covered by the gate, extending outwardly from the first portion of the fins to fo…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9023697B2 cover?
- A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitrid…
- Who is the assignee on this patent?
- IBM, Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D84/0193. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 05 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).