Cathode obtaining method and electron beam writing apparatus
US-2015357146-A1 · Dec 10, 2015 · US
US9023251B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9023251-B2 |
| Application number | US-201113210408-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 16, 2011 |
| Priority date | Apr 19, 2011 |
| Publication date | May 5, 2015 |
| Grant date | May 5, 2015 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The present disclosure provides a method for making carbon nanotube slurry. The method includes the following steps. First, a carbon nanotube array is provided on a substrate, the carbon nanotube array comprises a number of carbon nanotubes. Second, the carbon nanotube array is trimmed by a laser to obtain a trimmed carbon nanotube array comprising a plurality of trimmed carbon nanotubes having uniform lengths. Third, the trimmed carbon nanotube array is removed from the substrate to obtain the trimmed carbon nanotubes. Fourth, the trimmed carbon nanotubes are mixed with an inorganic binder and an organic carrier to obtain the carbon nanotube slurry.
Opening claim text (preview).
What is claimed is: 1. A method for making carbon nanotube slurry, the method comprising: providing a carbon nanotube array on a substrate, the carbon nanotube array comprising a plurality of carbon nanotubes; trimming the carbon nanotube array by a laser to obtain a trimmed carbon nanotube array, wherein the entire carbon nanotube array on the substrate is trimmed, and the trimmed carbon nanotube array has a plurality of trimmed carbon nanotubes having substantially uniform lengths, wherein a power density of the laser is larger than or equal to 12×10 11 watt/m 2 ; removing the trimmed carbon nanotube array from the substrate to obtain the trimmed carbon nanotubes having the substantially uniform lengths; and mixing the trimmed carbon nanotubes with an inorganic binder and an organic carrier to obtain a carbon nanotube slurry wherein the step of trimming the carbon nanotube array by the laser comprises: fixing the position of the carbon nanotube array, moving the laser relative to the carbon nanotube array along a first direction which is substantially parallel to the top surface of the carbon nanotube array to obtain a groove; moving the laser relative to the carbon nanotube array along a second direction which is substantially parallel to the top surface of the carbon nanotube array; and moving the laser along the first direction and the second direction alternately to make the laser irradiate the entire carbon nanotube array, wherein the first direction is intersected with the second direction. 2. The method of claim 1 , wherein the carbon nanotubes are parallel to each other and perpendicular to a surface of the substrate. 3. The method of claim 1 , wherein the laser irradiates the carbon nanotube array along a direction parallel to an axial direction of the carbon nanotubes in the carbon nanotube array. 4. The method of claim 1 , wherein lengths of the trimmed carbon nanotubes are in a range from about 1 micrometer to about 25 micrometers. 5. The method of claim 4 , wherein the lengths of the trimmed carbon nanotubes are in a range from about 5 micrometers to about 10 micrometers. 6. The method of claim 1 , wherein a length difference between a longest carbon nanotube and a shortest carbon nanotube in the trimmed carbon nanotube array is less than or equal to 5 micrometers. 7. The method of claim 6 , wherein the length difference between the longest carbon nanotube and the shortest carbon nanotube in the trimmed carbon nanotube array is in a range from about 2 micrometers to about 3 micrometers. 8. The method of claim 7 , wherein a power of the laser is greater than 3 watts. 9. The method of claim 8 , wherein the power of the laser is greater than 4.2 watts. 10. The method of claim 1 , wherein the laser is a pulse laser. 11. The method of claim 1 , wherein a speed of the laser moving along the first direction is less than or equal to 80 mm/sec. 12. The method of claim 11 , wherein the speed of the laser moving along the first direction is less than or equal to 80 mm/sec and greater than or equal to 20 mm/sec. 13. The method of claim 1 , wherein the second direction is perpendicular to the first direction. 14. The method of claim 1 , wherein a shifting distance of the laser along the second direction is greater than 5 micrometers. 15. The method of claim 14 , wherein the shifting distance is greater than 5 micrometers and less than or equal to 20 micrometers. 16. The method of claim 1 , wherein a power of the laser is about 4.2 W, a speed of the laser moving along the first direction is about 20 mm/sec, a shifting distance of the laser moving along the second direction is about 8 μm. 17. The method of claim 1 , wherein a shifting distance of the laser moving along the second direction after the laser moving along the first direction is greater than a width of the groove.
the conductive material comprising carbon-silicon compounds, carbon or silicon · CPC title
Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title
Carbon nanotubes (CNTs) · CPC title
Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors · CPC title
for carbon nanotubes or fullerenes · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.