Flash memory for code and data storage

US9021182B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9021182-B2
Application numberUS-201113250077-A
CountryUS
Kind codeB2
Filing dateSep 30, 2011
Priority dateOct 3, 2010
Publication dateApr 28, 2015
Grant dateApr 28, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A flash memory for code and data storage includes a code memory array having fast read access and suitability for execute in place, a data memory array having the characteristics of low bit cost and high density storage, and a suitable interface to provide access to both the code and data. The code memory array may be a NOR array or a performance-enhanced NAND array. The memory may be implemented in a single chip package or multi-chip package solution.

First claim

Opening claim text (preview).

The invention claimed is: 1. A flash memory comprising: a first chip comprising: a NOR flash memory array specialized for code storage; and a first multi-input/output Serial Peripheral Interface coupled to the NOR flash memory array and having a plurality of configurable pins configurable as a single Serial Peripheral Interface or as a quad Serial Peripheral Interface to provide access to the NOR flash memory array; a second chip comprising: a NAND flash memory array specialized for data storage; and a second multi-input/output Serial Peripheral Interface coupled to the NAND flash memory array and having a plurality of configurable pins configurable as a single Serial Peripheral Interface or as a quad Serial Peripheral Interface in the same manner as the configurable pins of the first multi-input/output Serial Peripheral Interface to provide access to the NAND flash memory array; and a multi-chip package containing the first chip and the second chip and comprising a plurality of pins mounted thereon, at least some of the pins of the multi-chip package being configurable pins, and each of the configurable pins of the multi-chip package being coupled to respective same-type configurable pins of the first and second multi-input/output Serial Peripheral Interfaces. 2. A flash memory as in claim 1 wherein the pins of the multi-chip package consist of eight pins common to pins of both the first multi-input/output Serial Peripheral Interface and the second multi-input/output Serial Peripheral Interface, the eight pins respectively being a power pin, a ground pin, a clock pin, a chip select pin, a configurable hold or input/output pin, a configurable write-protect or input/output pin, a configurable data out or input/output pin, and a configurable data in or input/output pin. 3. A flash memory as in claim 2 wherein: the first multi-input/output Serial Peripheral Interface is further configurable as a dual Serial Peripheral Interface; the second multi-input/output Serial Peripheral Interface is further configurable as a dual Serial Peripheral Interface; and the pins of the multi-chip package are further configurable in a dual serial configuration to provide access to the NOR flash memory array and to the NAND flash memory array.

Assignees

Inventors

Classifications

  • Controller construction arrangements · CPC title

  • in block erasable memory, e.g. flash memory · CPC title

  • Multiple device management, e.g. distributing data over multiple flash devices · CPC title

  • comprising cells having several storage transistors connected in series · CPC title

  • Reduction of number of input/output pins by using a serial interface to transmit or receive addresses or data, i.e. serial access memory · CPC title

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Frequently asked questions

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What does patent US9021182B2 cover?
A flash memory for code and data storage includes a code memory array having fast read access and suitability for execute in place, a data memory array having the characteristics of low bit cost and high density storage, and a suitable interface to provide access to both the code and data. The code memory array may be a NOR array or a performance-enhanced NAND array. The memory may be implement…
Who is the assignee on this patent?
Park Eungjoon, Jigour Robin John, Park Jooweon, and 2 more
What technology area does this patent fall under?
Primary CPC classification G06F12/0246. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).