High aspect ratio dense pattern-programmable nanostructures utilizing metal assisted chemical etching
US-2015376798-A1 · Dec 31, 2015 · US
US9020104B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9020104-B2 |
| Application number | US-201313785178-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 5, 2013 |
| Priority date | Mar 14, 2012 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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The present invention provides a method of adjusting an X-ray optical apparatus which includes: an X-ray source; and a reflective structure where at least three reflective substrate arranged with an interval and X-rays which are incident into a plurality of passages whose both sides are put between the reflective substrates are reflected and parallelized by the reflective substrate at both sides of each passage to be emitted from the passage. When one edge of the reflective structure is an inlet of the X-ray and the other edge is an outlet of the X-ray, a pitch of the reflective substrates at the outlet side is larger than a pitch at the inlet side. The method comprises adjusting the relative positions of the X-ray source and the reflective structure so as to reduce a penumbra amount formed by the X-ray emitted from each of the passages.
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What is claimed is: 1. A method of adjusting an X-ray optical apparatus, said X-ray optical apparatus including: an X-ray source; and a reflective structure in which at least three reflective substrates are arranged with an interval, and X-rays which are incident into a plurality of passages, both sides of each passage being put between the reflective substrates, are reflected and parallelized by the reflective substrate at both sides of each passage to be emitted from the pa…
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