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Data reading method, and control circuit, memory module and memory storage apparatus and memory module using the same
US9019770B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9019770-B2 |
| Application number | US-201313901571-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 24, 2013 |
| Priority date | Mar 26, 2013 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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Abstract
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A data reading method for a rewritable non-volatile memory module is provided. The method includes applying a test voltage to a word line of the rewritable non-volatile memory module to read a plurality of verification bit data. The method also includes calculating a variation of bit data identified as a first status among the verification bit data, obtaining a new read voltage value set based on the variation, and updating a threshold voltage set for the word line with the new read voltage value set. The method further includes using the updated threshold voltage set to read data from a physical page formed by memory cells connected to the word line. Accordingly, storage states of memory cells in the rewritable non-volatile memory module can be identified correctly, thereby preventing data stored in the memory cells from losing.
First claim
Opening claim text (preview).
What is claimed is: 1. A memory read method for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module has a plurality of memory cells, a plurality of word lines and a plurality of bit lines, each of the memory cells electrically connected to one of the word lines and one of the bit lines, each of the memory cells stores at least one bit data, each of the bit data is identified as a first state or a second state according to a voltage, and the me…
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- G11C16/26Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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Frequently asked questions
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- What does patent US9019770B2 cover?
- A data reading method for a rewritable non-volatile memory module is provided. The method includes applying a test voltage to a word line of the rewritable non-volatile memory module to read a plurality of verification bit data. The method also includes calculating a variation of bit data identified as a first status among the verification bit data, obtaining a new read voltage value set based …
- Who is the assignee on this patent?
- Phison Electronics Corp
- What technology area does this patent fall under?
- Primary CPC classification G11C16/26. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).