Semiconductor device and manufacturing method and operating method for the same

Patent metadata

Field	Value
Publication number	US-9019769-B2
Application number	US-201213710517-A
Country	US
Kind code	B2
Filing date	Dec 11, 2012
Priority date	Dec 11, 2012
Publication date	Apr 28, 2015
Grant date	Apr 28, 2015

Abstract

A semiconductor device and a manufacturing method and an operating method for the same are provided. The semiconductor device comprises a substrate, a doped region and a stack structure. The doped region is in the substrate. The stack structure is on the substrate. The stack structure comprises a dielectric layer, an electrode layer, a solid electrolyte layer and an ion supplying layer.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a substrate;
a doped region in the substrate; and
a stack structure on the substrate, the stack structure comprising:
a dielectric layer;
an electrode layer;
a solid electrolyte layer; and
an ion supplying layer, wherein the electrode layer and the substrate are separated by the dielectric layer.

2. The semiconductor device according to claim 1 , wherein the solid electrolyte layer is bet…

Assignees

• Macronix Int Co Ltd

Inventors

• Lee Feng-Ming
• Lin Yu-Yu
• Lee Ming-Hsiu

Classifications

• H10D64/035

  Electricity · mapped topic

• H10D30/68

  Electricity · mapped topic

• H01L29/788

  Electricity · mapped topic

• H01L21/28273

  Electricity · mapped topic

• G11C16/0408 Primary

  Physics · mapped topic