Semiconductor device, data programming device, and method for improving the recovery of bit lines of unselected memory cells for programming operation

Patent metadata

Field	Value
Publication number	US-9019765-B2
Application number	US-201313918590-A
Country	US
Kind code	B2
Filing date	Jun 14, 2013
Priority date	Jun 14, 2013
Publication date	Apr 28, 2015
Grant date	Apr 28, 2015

Abstract

A device comprises a non-volatile memory array, a first selection circuit selecting whether to make a first connection path between a first bit line and a first circuit node, and selecting whether to make a second connection path between the first bit line and a second circuit node, a power supplying circuit supplying a power supply voltage to the first circuit node, the power supply voltage being, when the first connection path is selected to be made, supplied to the first bit line, and a first voltage supplying circuit supplying a first voltage to the second circuit node, the first voltage being, when the second connection path is selected to be made, supplied to the first bit line, the first voltage and the power supply voltage being higher than a ground potential, and the first voltage being higher than the power supply voltage.

First claim

What is claimed is:

1. A device comprising:
a non-volatile memory array in which a program operation including a plurality of phases is performed, the non-volatile memory array including,
first and second selection transistors,
a plurality of memory cells coupled between the first and second selection transistors,
a first bit line coupled to the first selection transistor, and
a first source line coupled to the second selection transistor;

first and second circuit nodes…

Assignees

• Ps4 Luxco Sarl

Inventors

• Della Mina Diego
• Khouri Osama
• Missiroli Chiara

Classifications

• G11C16/10

  Physics · mapped topic

• G11C16/24 Primary

  Physics · mapped topic