Tunnel junction laminated film, magnetic memory element, and magnetic memory
US-2024284803-A1 · Aug 22, 2024 · US
Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
US9019758B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9019758-B2 |
| Application number | US-201113225338-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 2, 2011 |
| Priority date | Sep 14, 2010 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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Abstract
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A spin transfer torque magnetic random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer. The magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bi-layer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization having a preferred direction perpendicular to film plane.
First claim
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The invention claimed is: 1. A spin transfer torque magnetic random access memory (STTMRAM) element comprising: a composite fixed layer formed on top of a substrate, the composite fixed layer having a fixed magnetization direction substantially perpendicular to a plane of the substrate; a tunnel barrier layer formed upon the fixed layer; and a composite free layer formed upon the tunnel barrier layer, the composite free layer having a switchable magnetization direction substan…
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Electricity · mapped topic
Electricity · mapped topic
Physics · mapped topic
Operations & Transport · mapped topic
- G11C11/16Primary
Physics · mapped topic
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- What does patent US9019758B2 cover?
- A spin transfer torque magnetic random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer. The magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The com…
- Who is the assignee on this patent?
- Huai Yiming, Zhang Jing, Ranjan Rajiv Yadav, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification G11C11/16. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).