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Resistive memory device and method for driving the same
US9019746B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9019746-B2 |
| Application number | US-201313844923-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 16, 2013 |
| Priority date | Nov 14, 2012 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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Abstract
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A resistive memory device includes a plurality of memory cells, each of which is configured to store a normal data, a first reference data corresponding to a first resistance state and a second reference data corresponding to a second resistance state, a data copy unit configured to temporarily store the normal data read from a selected memory cell and generate a copied cell current based on the stored normal data, a mirroring block configured to temporarily store the first and second reference data read from the selected memory cell, and to generate a first reference current and a second reference current based on the stored first and second reference data, respectively, and a sensing unit configured to sense the stored normal data based on the copied cell current and the first reference current and the second reference current.
First claim
Opening claim text (preview).
What is claimed is: 1. A resistive memory device, comprising: a plurality of memory cells, each of which is configured to store a normal data, a first reference data corresponding to a first resistance state and a second reference data corresponding to a second resistance state; a data copy unit configured to temporarily store the normal data read from a selected memory cell and generate a copied cell current based on the stored normal data; a mirroring block configured to tem…
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- G11C13/004Primary
Physics · mapped topic
Physics · mapped topic
- G11C16/26Primary
Physics · mapped topic
Physics · mapped topic
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Frequently asked questions
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- What does patent US9019746B2 cover?
- A resistive memory device includes a plurality of memory cells, each of which is configured to store a normal data, a first reference data corresponding to a first resistance state and a second reference data corresponding to a second resistance state, a data copy unit configured to temporarily store the normal data read from a selected memory cell and generate a copied cell current based on th…
- Who is the assignee on this patent?
- Sk Hynix Inc
- What technology area does this patent fall under?
- Primary CPC classification G11C13/004. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).