Chip with electrostatic discharge protection function

Patent metadata

Field	Value
Publication number	US-9019672-B2
Application number	US-201313943804-A
Country	US
Kind code	B2
Filing date	Jul 17, 2013
Priority date	Jul 17, 2013
Publication date	Apr 28, 2015
Grant date	Apr 28, 2015

Abstract

A chip with electrostatic discharge protection function includes two power rails, a pin, a P-type FinFET, an N-type FinFET, two Fin-resistors, two diodes and an ESD unit. The pin is electrically connected to one power rail sequentially through one Fin-resistor and the P-type FinFET and electrically connected to the other power rail sequentially through the other Fin-resistor and the N-type FinFET. The two FinFETs are configured to have the control terminals thereof for receiving a transmission signal. The pin is further electrically connected to the two power rails through the two diodes, respectively. The ESD unit, electrically connected between the first and second power rails, is configured to provide an ESD path between the first and second power rails.

First claim

What is claimed is:

1. A chip with electrostatic discharge (ESD) protection function, comprising:
a first power rail electrically connected to a source voltage;
a second power rail electrically connected to a reference voltage;
a pin;
a P-type FinFET comprising a first terminal, a second terminal and a first control terminal, the P-type FinFET being configured to have the first terminal thereof electrically connected to the first power rail, and the first control terminal th…

Assignees

• United Microelectronics Corp

Inventors

• Chen shao-ping

Classifications

• H10D30/62

  Electricity · mapped topic

• H10D89/60

  Electricity · mapped topic

• H02H9/046 Primary

  Electricity · mapped topic

• H01L27/0248

  Electricity · mapped topic

• H01L29/785

  Electricity · mapped topic