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Silicon wafer and fabrication method thereof
US9018735B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9018735-B2 |
| Application number | US-201313917117-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 13, 2013 |
| Priority date | Sep 29, 2008 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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Abstract
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A silicon wafer and fabrication method thereof are provided. The silicon wafer includes a first denuded zone formed with a predetermined depth from a top surface of the silicon wafer, the first denuded zone being formed with a depth ranging from approximately 20 μm to approximately 80 μm from the top surface, and a bulk area formed between the first denuded zone and a backside of the silicon wafer, the bulk area having a concentration of oxygen uniformly distributed within a variation of 10% over the bulk area.
First claim
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What is claimed is: 1. A silicon wafer, comprising: a first denuded zone formed with a depth ranging from approximately 20 μm to approximately 80 μm from a top surface of the silicon wafer; and a bulk area formed between the first denuded zone and a backside of the silicon wafer, the bulk area having a concentration of oxygen within a range from approximately 10.5 to approximately 13 ppma (parts per million atom) uniformly distributed within a variation of 10% over the bulk area…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P32/1406Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9018735B2 cover?
- A silicon wafer and fabrication method thereof are provided. The silicon wafer includes a first denuded zone formed with a predetermined depth from a top surface of the silicon wafer, the first denuded zone being formed with a depth ranging from approximately 20 μm to approximately 80 μm from the top surface, and a bulk area formed between the first denuded zone and a backside of the silicon wa…
- Who is the assignee on this patent?
- Magnachip Semiconductor Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P32/1406. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).