Package substrate and semiconductor package including the same
US-2024429153-A1 · Dec 26, 2024 · US
Microstructure device comprising a face to face electromagnetic near field coupling between stacked device portions and method of forming the device
US9018730B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9018730-B2 |
| Application number | US-201213438684-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 3, 2012 |
| Priority date | Apr 5, 2011 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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Abstract
Official abstract text for this publication.
A galvanic-isolated coupling of circuit portions is accomplished on the basis of a stacked chip configuration. The semiconductor chips thus can be fabricated on the basis of any appropriate process technology, thereby incorporating one or more coupling elements, such as primary or secondary coils of a micro transformer, wherein the final characteristics of the micro transformer are adjusted during the wafer bond process.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising: a first chip including: a first substrate; a first semiconductor layer on the first substrate; a first circuit portion formed in and above said first semiconductor layer; and a first through hole via extending through said first substrate and connecting a rear side of said first substrate with said first circuit portion; a second chip attached to said first chip to form a stacked configuration, the second c…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9018730B2 cover?
- A galvanic-isolated coupling of circuit portions is accomplished on the basis of a stacked chip configuration. The semiconductor chips thus can be fabricated on the basis of any appropriate process technology, thereby incorporating one or more coupling elements, such as primary or secondary coils of a micro transformer, wherein the final characteristics of the micro transformer are adjusted dur…
- Who is the assignee on this patent?
- Renna Crocifisso Marco Antonio, Scuderi Antonino, Magro Carlo, and 5 more
- What technology area does this patent fall under?
- Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).