Display Device
US-2024290249-A1 · Aug 29, 2024 · US
Light emitting device
US9018656B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9018656-B2 |
| Application number | US-201013201853-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 23, 2010 |
| Priority date | Feb 24, 2009 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer from the p-type nitride semiconductor layer, and a cathode electrode on the n-type nitride semiconductor layer. The mounting substrate has a patterned conductor which is connected to the cathode electrode through a bump and also connected to the anode electrode through a bump. The LED chip further comprises one or more dielectric layer between the p-type nitride semiconductor layer and the anode electrode to have an arrangement which resembles an island. The p-type nitride semiconductor layer has a first region which is overlapped with the bump. The dielectric layer is not formed within the first region.
First claim
Opening claim text (preview).
The invention claimed is: 1. A light emitting device comprising: an LED chip and a mounting substrate, said LED chip comprising an n-type nitride semiconductor layer, a nitride light emission layer, a p-type nitride semiconductor layer, an anode electrode, and a cathode electrode, said n-type nitride semiconductor layer having a first surface, said nitride light emission layer being disposed on said first surface of said n-type nitride semiconductor layer, said p-type nitr…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10H20/814Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9018656B2 cover?
- The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer from the p-type nitride semiconductor layer, and a cathode …
- Who is the assignee on this patent?
- Murai Akihiko, Yasuda Masaharu, Iwahashi Tomoya, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10H20/814. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).