Highly conformal extension doping in advanced multi-gate devices
US-9209274-B2 · Dec 8, 2015 · US
US9018083B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9018083-B2 |
| Application number | US-201414286513-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 23, 2014 |
| Priority date | May 4, 2011 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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In an example of a method for controlling the formation of dopants in an electrically actuated device, a predetermined concentration of a dopant initiator is selected. The predetermined amount of the dopant is localized, via diffusion, at an interface between an electrode and an active region adjacent to the electrode. The dopant initiator reacts with a portion of the active region to form the dopants.
Opening claim text (preview).
What is claimed is: 1. A method for controlling the formation of dopants in an electrically actuated device, the method comprising: annealing a dopant initiator layer and an electrode positioned on the dopant initiator layer, thereby causing some dopant initiators in the dopant initiator layer to diffuse through the electrode to an exposed surface of the electrode; and after the annealing, depositing an active region on the diffused dopant initiators and the exposed surface of t…
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