Semiconductor Device and Method of Forming Fine Pitch Conductive Posts with Graphene-Coated Cores
US-2024312884-A1 · Sep 19, 2024 · US
US9018077B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9018077-B2 |
| Application number | US-201013259278-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 30, 2010 |
| Priority date | Apr 30, 2009 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly; and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface comprises a polarized surface layer; the second bonding surface comprises a hydrophilic surface layer; the first and second bonding surfaces are different.
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We claim: 1. A method for bonding substrates comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly, wherein the first substrate is a Si wafer and the second substrate is a silicate wafer; and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface consists of O 2…
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