Semiconductor storage device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9018076-B2
Application number	US-201313746304-A
Country	US
Kind code	B2
Filing date	Jan 21, 2013
Priority date	Oct 29, 2009
Publication date	Apr 28, 2015
Grant date	Apr 28, 2015

Abstract

A semiconductor storage device includes: memory cells including a transistor and a capacitor; bit lines; word lines; and sense amplifiers including first and second sense amplifiers, wherein the memory cells includes: a first memory cell group sharing a first auxiliary word line; and a second memory cell group sharing a second auxiliary word line, wherein the word lines includes a first word line coupled to the first auxiliary word line and a second word line coupled to the second auxiliary word line, the first word line is coupled to the first auxiliary word line in a first word line contact region, the second word line is coupled to the second auxiliary word line in a second word line contact region, the bit lines includes first and second bit lines coupled to the first sense amplifier on both sides of the first word line contact region.

First claim

The invention claimed is:

1. A method of manufacturing a semiconductor storage device, the method comprising:
forming element isolation trenches in a semiconductor substrate, the element isolation trenches identifying active regions arranged in a matrix pattern extending in a first direction and a second direction, each of the active regions including a transistor region and a capacitor region;
filling the element isolation trenches with an element isolation insulating film;
r…

Assignees

• Fujitsu Semiconductor Ltd

Inventors

• Ogawa Hiroyuki
• Yamaguchi Akihisa

Classifications

• H10D64/011 Primary

  Electricity · mapped topic

• H10D89/10 Primary

  Electricity · mapped topic

• H01L27/10894

  Electricity · mapped topic

• H01L27/10882

  Electricity · mapped topic

• H01L27/10891

  Electricity · mapped topic