Semiconductor device with high breakdown voltage and manufacture thereof
US-9520326-B2 · Dec 13, 2016 · US
Semiconductor structure and a method for manufacturing the same
US9018069B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9018069-B2 |
| Application number | US-201314021120-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 9, 2013 |
| Priority date | Jul 19, 2011 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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- Title
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Abstract
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A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a diode. The diode comprises a first doped region, a second doped region and a third doped region. The first doped region and the third doped region have a first conductivity type. The second doped region has a second conductivity type opposite to the first conductivity type. The second doped region and the third doped region are separated from each other by the first doped region. The third doped region has a first portion and a second portion adjacent to each other. The first portion and the second portion are respectively adjacent to and away from the second doped region. A dopant concentration of the first portion is bigger than a dopant concentration of the second portion.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a semiconductor structure, comprising forming a diode, a method for forming the diode comprising: forming a second doped region on a first doped region comprising a well region and a top layer having a dopant concentration bigger than that of the well region; and forming a third doped region on the first doped region, wherein the first doped region and the third doped region have a first conductivity type, the second doped regi…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9018069B2 cover?
- A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a diode. The diode comprises a first doped region, a second doped region and a third doped region. The first doped region and the third doped region have a first conductivity type. The second doped region has a second conductivity type opposite to the first conductivity type. Th…
- Who is the assignee on this patent?
- Macronix Int Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D8/022. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).