Method of encapsulating a micro-device by anodic bonding

US9018043B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9018043-B2
Application numberUS-201414198947-A
CountryUS
Kind codeB2
Filing dateMar 6, 2014
Priority dateMar 13, 2013
Publication dateApr 28, 2015
Grant dateApr 28, 2015

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A method for encapsulating at least one micro-device, comprising at least the following steps: bonding a face of a first substrate comprising at least one material impermeable to noble gases, in contact with a second substrate comprising glass and with a thickness of about 300 μm or more; etching at least one cavity through the second substrate such that side walls of the cavity are at least partly formed by remaining portions of the second substrate and that an upper wall of the cavity is formed by part of said face of the first substrate; anodic bonding of the remaining portions of the second substrate in contact with a third substrate in which the micro-device is formed, such that the micro-device is encapsulated in the cavity.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for encapsulating at least one micro-device, comprising at least the following steps: bonding a face of a first substrate comprising at least one material impermeable to noble gases, in contact with a second substrate comprising glass and with a thickness of about 300 μm or more; etching at least one cavity through the second substrate such that side walls of the cavity are at least partly formed by remaining portions of the second substrate…

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What does patent US9018043B2 cover?
A method for encapsulating at least one micro-device, comprising at least the following steps: bonding a face of a first substrate comprising at least one material impermeable to noble gases, in contact with a second substrate comprising glass and with a thickness of about 300 μm or more; etching at least one cavity through the second substrate such that side walls of the cavity are …
Who is the assignee on this patent?
Commissariat Energie Atomique, Commissariat Energie Atomique
What technology area does this patent fall under?
Primary CPC classification B81C1/00269. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).