Oxidizing the Source and Doping the Drain of a Thin-Film Transistor
US-2015372150-A1 · Dec 24, 2015 · US
Pattern formation method and guide pattern material
US9017930B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9017930-B2 |
| Application number | US-201213623237-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 20, 2012 |
| Priority date | Sep 26, 2011 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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Abstract
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According to one embodiment, a pattern formation method includes forming a pattern on a layer. The layer has a first surface energy and includes a silicon compound. The pattern has a second surface energy different from the first surface energy. The method includes forming a block polymer on the layer and the pattern. The method includes forming a structure selected from a lamellar structure and a cylindrical structure of the block polymer containing polymers arranged by microphase separation. The lamellar structure is oriented perpendicularly to the layer surface. The cylindrical structure is oriented so as to have an axis parallel to a normal line of the layer surface. The second surface energy is not less than a maximum value of surface energies of the polymers or not more than a minimum value of the surface energies of the polymers.
First claim
Opening claim text (preview).
What is claimed is: 1. A pattern formation method comprising: forming an organic film on a film to be processed; forming a layer having a first surface energy and comprising a silicon compound on the organic film; forming a pattern, which has a second surface energy different from the first surface energy, on the layer using a photosensitive material pattern formed by light; forming a block polymer on the layer and the pattern; forming a structure selected from the group c…
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Electricity · mapped topic
- H10P76/2043Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
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Frequently asked questions
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- What does patent US9017930B2 cover?
- According to one embodiment, a pattern formation method includes forming a pattern on a layer. The layer has a first surface energy and includes a silicon compound. The pattern has a second surface energy different from the first surface energy. The method includes forming a block polymer on the layer and the pattern. The method includes forming a structure selected from a lamellar structure an…
- Who is the assignee on this patent?
- Nakamura Hiroko, Mikoshiba Satoshi, Hieno Atsushi, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10P76/2043. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).