Underlayer composition and method of manufacturing a semiconductor device
US-2024369932-A1 · Nov 7, 2024 · US
US9017922B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9017922-B2 |
| Application number | US-201314022287-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 10, 2013 |
| Priority date | Sep 14, 2012 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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A chemically amplified resist composition comprising a base polymer and an amine quencher in the form of a β-alanine, γ-aminobutyric acid, 5-aminovaleric acid, 6-aminocaproic acid, 7-aminoheptanoic acid. 8-aminooctanoic acid or 9-aminononanoic acid derivative having an unsubstituted carboxyl group has a high contrast of alkaline dissolution in rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide DOF.
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The invention claimed is: 1. A chemically amplified resist composition comprising a base polymer and a basic compound of the general formula (1): wherein R 1 is hydrogen, or a straight, branched or cyclic C 1 -C 30 alkyl, C 6 -C 30 aryl, C 7 -C 30 aralkyl, C 2 -C 30 alkenyl, C 2 -C 10 alkynyl, or C 4 -C 12 heterocyclic-bearing group, or a combination of such groups, whic…
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