Chemically amplified positive resist composition and resist pattern forming process
US-12164231-B2 · Dec 10, 2024 · US
US9017920B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9017920-B2 |
| Application number | US-201213539617-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 2, 2012 |
| Priority date | Dec 22, 2011 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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A film includes base and a photosensitive layer formed on the base. The photosensitive layer substantially includes a first photosensitive agent, a second photosensitive agent, and a thermosol. The first photosensitive agent is water-soluble. The second photosensitive agent is an aromatic ketone compound or a benzoin ether compound. The method for manufacturing the film and the masking method using the film is also provided.
Opening claim text (preview).
What is claimed is: 1. A film, comprising: a base; and a photosensitive layer formed on the base, the photosensitive layer substantially comprising a first photosensitive agent, a second photosensitive agent, and a thermosol, the first photosensitive agent being water-soluble, the second photosensitive agent being an aromatic ketone compound or benzoin ether compound, the mass percentage of the first photosensitive agent in the photosensitive layer being about 80% to about 90%.…
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Cross-Sectional Technologies · mapped topic
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