Manufacturing method for photomask, and photomask
US-2024427229-A1 · Dec 26, 2024 · US
Mask overlay control
US9017903B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9017903-B2 |
| Application number | US-201313947180-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 22, 2013 |
| Priority date | Jul 22, 2013 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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Abstract
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Some embodiments of the present disclosure relate to a method of patterning a workpiece with a mask, wherein a scale factor between a geometry of the mask and a corresponding target shape of the mask is determined. The scale factor results from thermal expansion of the mask and geometry due to heating of the mask during exposure to radiation by an electron beam (e-beam) in the mask manufacturing process. A number of radiation pulses necessary to dispose the geometry on the mask is determined. A scale factor for the mask is then determined from the number of pulses. The target shape is then generated on the mask by re-scaling the geometry according to the scale factor prior to mask manufacturing. This method compensates for thermal deformation due to e-beam heating to improve OVL variability in advanced technology nodes.
First claim
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What is claimed is: 1. A method of patterning a workpiece with a mask, comprising: determining a scale factor, between a geometry of the mask and a corresponding target shape of the mask, that results from mask manufacturing; and generating the target shape on the mask, by re-scaling the geometry according to the scaling factor, prior to mask manufacturing. 2. The method of claim 1 , wherein determining the scale factor comprises: measuring thermal expans…
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- What does patent US9017903B2 cover?
- Some embodiments of the present disclosure relate to a method of patterning a workpiece with a mask, wherein a scale factor between a geometry of the mask and a corresponding target shape of the mask is determined. The scale factor results from thermal expansion of the mask and geometry due to heating of the mask during exposure to radiation by an electron beam (e-beam) in the mask manufacturin…
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification G03F1/70. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).