Methods of manufacturing polyresistors with selected tcr
US-2015364533-A1 · Dec 17, 2015 · US
System for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, and process for producing polycrystalline silicon
US9017482B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9017482-B2 |
| Application number | US-201013496060-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 20, 2010 |
| Priority date | Sep 14, 2009 |
| Publication date | Apr 28, 2015 |
| Grant date | Apr 28, 2015 |
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Abstract
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The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.
First claim
Opening claim text (preview).
The invention claimed is: 1. A system for producing polycrystalline silicon comprising: a reactor configured for producing polycrystalline silicon; a coolant tank configured for storing a coolant; a coolant circulation path configured for feeding the coolant from the coolant tank to the reactor and for recovering the coolant to the coolant tank through a coolant flow passage provided in the reactor; an energy recovering section configured for taking out, for recovery of ener…
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Electricity · mapped topic
Electricity · mapped topic
- H10P14/3456Primary
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Operations & Transport · mapped topic
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Frequently asked questions
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- What does patent US9017482B2 cover?
- The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard …
- Who is the assignee on this patent?
- Netsu Shigeyoshi, Oguro Kyoji, Shimizu Takaaki, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3456. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 28 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).