Light-absorbing composition, light-absorbing film, method for producing light-absorbing film, and optical filter
US-2024377565-A1 · Nov 14, 2024 · US
US9013782B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9013782-B2 |
| Application number | US-201314144319-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 30, 2013 |
| Priority date | Mar 13, 2013 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a first substrate. The first substrate may have a first side and a second side. The low emissivity panels may also include a magnetic fluid layer deposited over the first side of the first substrate and a reflective layer deposited over the second side of the first substrate. The magnetic fluid layer may include magnetic particles. The reflective layer may include a conductive material configured to conduct an electrical current and generate a magnetic field. The magnetic field may be configured to change an orientation of the magnetic particles in the magnetic fluid layer and a transmissivity of the magnetic fluid layer within a visible spectrum. The low emissivity panels may also include a first bus and a second bus deposited along opposite edges of the reflective layer and electrically connected to the reflective layer.
Opening claim text (preview).
What is claimed is: 1. A low emissivity panel comprising: a first substrate, the first substrate having a first side and a second side; a magnetic fluid layer deposited over the first side of the first substrate; and a reflective layer deposited over the second side of the first substrate, the magnetic fluid layer comprising magnetic particles, the reflective layer comprising a conductive material configured to conduct an electrical current and generate a magnetic field, wherein the magnetic field is configured to change an orientation of the magnetic particles in the magnetic fluid layer and a transmissivity of the magnetic fluid layer within a visible spectrum. 2. The low emissivity panel of claim 1 , further comprising a first bus and a second bus, the first bus and the second bus deposited along opposite edges of the reflective layer and electrically connected to the reflective layer, wherein applying a voltage between the first bus and the second bus generates the electrical current through the reflective layer. 3. The low emissivity panel of claim 1 , wherein the conductive material of the reflective layer comprises one of silver or aluminum. 4. The low emissivity panel of claim 1 , wherein the reflective layer has a thickness of between about 10 nm and 40 nm. 5. The low emissivity panel of claim 1 , wherein the first substrate comprises glass and has a thickness of between about 1 mm and 20 mm. 6. The low emissivity panel of claim 1 , further comprising a second substrate, wherein the magnetic fluid layer is deposited between the first substrate and the second substrate. 7. The low emissivity panel of claim 6 , wherein the second substrate is attached to the first substrate along edges of the first substrate and the second substrate. 8. The low emissivity panel of claim 1 , wherein the magnetic particles comprise one of magnetite or hematite. 9. The low emissivity panel of claim 1 , wherein the magnetic particles comprise a surfactant, the surfactant comprising one of oleic acid, tetra-methyl ammonium hydroxide, citric acid, or soy lecithin. 10. The low emissivity panel of claim 1 , wherein the magnetic fluid layer comprises a plurality of capsules, each of the plurality of capsules comprising a portion of the magnetic particles suspended in a carrier fluid, wherein the plurality of capsules is adhered to the first side of the first substrate. 11. The low emissivity panel of claim 1 , wherein the low emissivity panel is configured to change a transmissivity by at least about 25% when the current is passed through the reflective layer. 12. The low emissivity panel of claim 1 , wherein the low emissivity panel is configured to apply different voltages at different locations along opposite edges of the reflective layer. 13. A method of operating a low emissivity panel, the method comprising: providing the low emissivity panel comprising a first substrate, a magnetic fluid layer deposited on a first surface of the first substrate, and a reflective layer deposited on a second surface of the first substrate, the magnetic fluid layer comprising magnetic particles, the reflective layer comprising a conductive material; and applying a first voltage to the reflective layer between two opposite edges of the reflective layer, wherein applying the first voltage changes a transmissivity of the low emissivity panel. 14. The method of claim 13 , wherein applying the first voltage generates an electrical current that passes through the reflective layer and creates a magnetic field, the magnetic field changing an orientation of the magnetic particles in the magnetic fluid layer, wherein a change in the orientation of the magnetic particles in the magnetic fluid layer changes a transmissivity of the magnetic fluid layer within a visible spectrum. 15. The method of claim 13 , wherein applying the first voltage to the reflective layer changes the transmissivity of the low emissivity panel by at least 25%. 16. The method of claim 13 , further comprising applying a second voltage to the reflective layer, wherein applying the second voltage further changes the transmissivity of the low emissivity panel. 17. The method of claim 16 , wherein the second voltage is about 0 V and the transmissivity of the low emissivity panel returns to an original state. 18. The method of claim 16 , wherein the second voltage has a reverse polarity relative to the first voltage. 19. The method of claim 16 , wherein applying the second voltage changes the transmissivity of the low emissivity panel in a different wavelength region relative to the first voltage. 20. The method of claim 13 , wherein a current density passed through the reflective layer ranges from between about 0.1 mA/μm 2 and 10 mA/μm 2 .
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