Avalanche photodiode
US-2024204127-A1 · Jun 20, 2024 · US
Avalanche photodiode-type semiconductor structure and process for producing such a structure
US9013019B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9013019-B2 |
| Application number | US-201314143493-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 30, 2013 |
| Priority date | Dec 31, 2012 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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Abstract
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Avalanche diode-type semiconductor structure ( 1 ) intended to receive electromagnetic radiation in a given wavelength. The structure ( 1 ) comprises a semiconductor multiplication zone ( 310 ) including a majority carrier concentration, and delimitation means suitable for laterally delimiting the multiplication zone ( 310 ). The delimitation means comprise a semiconductor zone ( 410 ) surrounding the multiplication zone ( 310 ) and comprising a forbidden energy gap greater than the forbidden energy gap of the major part ( 320 ) of the multiplication zone ( 310 ), said zone ( 410 ) having a type of conductivity opposite that of the multiplication zone ( 310 ) with a majority carrier concentration at least 10 times greater than that of the multiplication zone ( 310 ). The invention also relates to a process for producing an avalanche photodiode-type semiconductor structure.
First claim
Opening claim text (preview).
The invention claimed is: 1. Avalanche photodiode-type semiconductor structure intended to receive electromagnetic radiation in a given wavelength and comprising: a first semiconductor zone, called an absorption zone, with a first type of conductivity having a first face intended to receive the electromagnetic radiation and a second face opposite the first face, the semiconductor material in which said first zone is formed having a forbidden energy gap suitable for allowing electr…
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Classifications
Electricity · mapped topic
- H10F30/2255Primary
Electricity · mapped topic
- H10F30/225Primary
Electricity · mapped topic
Electricity · mapped topic
- H01L31/107Primary
Electricity · mapped topic
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- What does patent US9013019B2 cover?
- Avalanche diode-type semiconductor structure ( 1 ) intended to receive electromagnetic radiation in a given wavelength. The structure ( 1 ) comprises a semiconductor multiplication zone ( 310 ) including a majority carrier concentration, and delimitation means suitable for laterally delimiting the multiplication zone ( 310 ). The delimitation means comprise a semiconductor zone ( 410 ) surround…
- Who is the assignee on this patent?
- Commissariat Energie Atomique, Commissariat L Energie Atomique Et Aux Energies Alternatives
- What technology area does this patent fall under?
- Primary CPC classification H10F30/2255. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).