Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
Semiconductor device and method of manufacturing the same
US9013000B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9013000-B2 |
| Application number | US-201313931079-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 28, 2013 |
| Priority date | Jun 29, 2012 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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Abstract
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The present disclosure relates to a semiconductor device and a method of manufacturing the same. The semiconductor device may include a first metal gate electrode provided in a NMOS region of a substrate; and a second metal gate electrode provided in a PMOS region of the substrate, wherein the first and second metal gate electrodes may be formed of TiN material or TiAlN material. Here, the first metal gate electrode may have a higher titanium (Ti) content than the second metal gate electrode, and the second metal gate electrode may have a higher nitrogen (N) content than the first metal gate electrode.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a first metal gate electrode provided in an NMOS region of a substrate; and a second metal gate electrode provided in a PMOS region of the substrate, wherein the first metal gate electrode are formed of TiN material or TiAlN material, wherein the first metal electrode has a higher titanium (Ti) content than the second metal gate electrode, wherein the second metal gate electrode has a higher nitrogen (N) content tha…
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Electricity · mapped topic
- H10D84/0177Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9013000B2 cover?
- The present disclosure relates to a semiconductor device and a method of manufacturing the same. The semiconductor device may include a first metal gate electrode provided in a NMOS region of a substrate; and a second metal gate electrode provided in a PMOS region of the substrate, wherein the first and second metal gate electrodes may be formed of TiN material or TiAlN material. Here, the firs…
- Who is the assignee on this patent?
- Sk Hynix Inc, Iucf Hyu
- What technology area does this patent fall under?
- Primary CPC classification H10D84/0177. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).