Method for forming source/drain contacts
US-2024379814-A1 · Nov 14, 2024 · US
Semiconductor device with an inclined source/drain and associated methods
US9012999B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9012999-B2 |
| Application number | US-201213590548-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 21, 2012 |
| Priority date | Aug 21, 2012 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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Abstract
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A semiconductor device includes a semiconductor substrate having a channel region therein, a gate structure above the channel region, and source and drain regions on opposite sides of the gate structure. A respective contact is on each of the source and drain regions. At least one of the source and drain regions has an inclined upper contact surface with the respective contact. The inclined upper contact surface has at least a 50% greater area than would a corresponding flat contact surface.
First claim
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That which is claimed is: 1. A semiconductor device comprising: a semiconductor substrate having a channel region therein and at least one isolation region therein adjacent the channel region; a gate structure above the channel region; raised source and drain regions on opposite sides of said gate structure and having a bottom contacting said semiconductor substrate without overlapping the at least one isolation region; and a respective contact on each of said raised source…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9012999B2 cover?
- A semiconductor device includes a semiconductor substrate having a channel region therein, a gate structure above the channel region, and source and drain regions on opposite sides of the gate structure. A respective contact is on each of the source and drain regions. At least one of the source and drain regions has an inclined upper contact surface with the respective contact. The inclined upp…
- Who is the assignee on this patent?
- Liu Qing, Khare Prasanna, Loubet Nicolas, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10D84/0133. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).