Semiconductor device

Patent metadata

Field	Value
Publication number	US-9012991-B2
Application number	US-201414449806-A
Country	US
Kind code	B2
Filing date	Aug 1, 2014
Priority date	Aug 5, 2013
Publication date	Apr 21, 2015
Grant date	Apr 21, 2015

Abstract

A semiconductor device includes an N − -type well 13 , a P-type body diffusion layer 14 , an N + -type source diffusion layer 18 , an N + -type drain diffusion layer 19 , and a P + -type body contact region 32 . A plurality of the P + -type body contact regions 32 are located along gate electrodes 17 a and 17 b , a plurality of first contact holes 25 are located along the gate electrodes, and a plurality of second contact holes 27 are located along the gate electrodes. The pitch of the plurality of P + -type body contact regions 32 is larger than the pitch of the plurality of first contact holes 25.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first conductivity type first diffusion layer located in a semiconductor layer;
a gate electrode located over the first diffusion layer and the semiconductor layer via a gate insulation film;
a second conductivity type second diffusion layer that is one of a source region and a drain region, and is located in the first diffusion layer to one side of the gate electrode in a channel length direction;
a second conducti…

Assignees

• Seiko Epson Corp

Inventors

• Kuwazawa Kazunobu

Classifications

• H10W20/40

  Electricity · mapped topic

• H10W20/20

  Electricity · mapped topic

• H10D62/116

  Electricity · mapped topic

• H10D62/393

  Electricity · mapped topic

• H10D62/155

  Electricity · mapped topic