Semiconductor device having an isolation region separating a lateral double diffused metal oxide semiconductor (LDMOS) from a high voltage circuit region

Patent metadata

Field	Value
Publication number	US-9012979-B2
Application number	US-201313832084-A
Country	US
Kind code	B2
Filing date	Mar 15, 2013
Priority date	Mar 12, 2013
Publication date	Apr 21, 2015
Grant date	Apr 21, 2015

Abstract

A semiconductor device and method of manufacturing the same are provided. A device can include an LDMOS region and a high side region on a semiconductor substrate. The device can further include an insulating region separating the LDMOS region from the high side region and the insulating region can include a plurality of second conductive type wells, a plurality of second conductive type buried layer patterns, or both.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a lateral double diffused metal oxide semiconductor (LDMOS) region on a semiconductor substrate;
a high side region on the semiconductor substrate; and
an insulating region laterally separating the LDMOS region from the high side region,
wherein the LDMOS region comprises a gate, a first first-conductive-type diffusion region, and a first second-conductive-type diffusion region,
wherein the high side region compris…

Assignees

• Dongbu Hitek Co Ltd

Inventors

• Moon Nam Chil

Classifications

• H10D84/0151

  Electricity · mapped topic

• H10D84/038

  Electricity · mapped topic

• H10D62/111

  Electricity · mapped topic

• H10D30/0281

  Electricity · mapped topic

• H10D30/655

  Electricity · mapped topic