Gate Structure and Method for Fabricating the Same
US-2015372149-A1 · Dec 24, 2015 · US
Semiconductor memory device and method for manufacturing the same
US9012973B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9012973-B2 |
| Application number | US-201314096323-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 4, 2013 |
| Priority date | Aug 14, 2013 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
According to one embodiment, a semiconductor memory device includes an insulating film with a recess formed in an upper surface, and a conductive film provided on the insulating film and containing silicon, carbon and an impurity serving as an acceptor or donor for silicon. Carbon concentration of a first portion of the conductive film in contact with the insulating film is lower than carbon concentration of a second portion of the conductive film located in the recess and being equidistant from the insulating film placed on both sides thereof.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor memory device comprising: an insulating film with a recess formed in an upper surface; and a conductive film provided on the insulating film and containing silicon, carbon and an impurity serving as an acceptor or donor for silicon, carbon concentration of a first portion of the conductive film in contact with the insulating film being lower than carbon concentration of a second portion of the conductive film located in the recess and bei…
Assignees
Inventors
Classifications
Electricity · mapped topic
- H10D30/6891Primary
Electricity · mapped topic
Electricity · mapped topic
- H10D30/68Primary
Electricity · mapped topic
- H01L29/788Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9012973B2 cover?
- According to one embodiment, a semiconductor memory device includes an insulating film with a recess formed in an upper surface, and a conductive film provided on the insulating film and containing silicon, carbon and an impurity serving as an acceptor or donor for silicon. Carbon concentration of a first portion of the conductive film in contact with the insulating film is lower than carbon co…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6891. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).