Semiconductor device and processes for making same
US-2024290783-A1 · Aug 29, 2024 · US
Semiconductor device
US9012959B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9012959-B2 |
| Application number | US-201414198763-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 6, 2014 |
| Priority date | Jun 4, 2013 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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Abstract
Official abstract text for this publication.
A semiconductor device includes: a semiconductor substrate having an upper surface and a lower surface; a field effect transistor having a semiconductor layer on the upper surface of the semiconductor substrate, a gate electrode, a drain electrode, and a source electrode; a P-type diffusion region in the semiconductor substrate and extending to the upper surface of the semiconductor substrate; a first N-type diffusion region in the semiconductor substrate and extending t the upper surface of the semiconductor substrate; a first connection electrode connecting the P-type diffusion region to a grounding point; and a second connection electrode connecting the first N-type diffusion region to the gate electrode or the drain electrode. The P-type diffusion region and the first N-type diffusion region constitute a bidirectional lateral diode.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a semiconductor substrate having an upper surface and a lower surface; a field effect transistor having a semiconductor layer on the upper surface of the semiconductor substrate, a gate electrode, a drain electrode, and a source electrode; a P-type diffusion region in the semiconductor substrate and extending to the upper surface of the semiconductor substrate; a first N-type diffusion region in the semiconductor subs…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9012959B2 cover?
- A semiconductor device includes: a semiconductor substrate having an upper surface and a lower surface; a field effect transistor having a semiconductor layer on the upper surface of the semiconductor substrate, a gate electrode, a drain electrode, and a source electrode; a P-type diffusion region in the semiconductor substrate and extending to the upper surface of the semiconductor substrate; …
- Who is the assignee on this patent?
- Mitsubishi Electric Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D8/051. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).