Neutron-detecting apparatuses and methods of fabrication
US-2015380593-A1 · Dec 31, 2015 · US
US9012940B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9012940-B2 |
| Application number | US-201013255341-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 26, 2010 |
| Priority date | Apr 30, 2009 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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An optoelectronic semiconductor body ( 1 ) having an active semiconductor layer sequence ( 10 ) and a reflective layer system ( 20 ) is described. The reflective layer system ( 20 ) comprises a first radiation-permeable layer ( 21 ), which adjoins the semiconductor layer sequence ( 10 ), and a metal layer ( 23 ) on the side of the first radiation-permeable layer ( 21 ) facing away from the semiconductor layer sequence ( 10 ). The first radiation-permeable layer ( 21 ) contains a first dielectric material. Between the first radiation-permeable layer ( 21 ) and the metal layer ( 23 ) there is disposed a second radiation-permeable layer ( 22 ) which contains an adhesion-improving material. The metal layer ( 23 ) is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer ( 23 ) is improved in comparison with the adhesion on the first dielectric material.
Opening claim text (preview).
The invention claimed is: 1. Optoelectronic semiconductor body having: an active semiconductor layer sequence; and a reflective layer system including a first radiation-permeable layer adjoining the semiconductor layer sequence; the first radiation-permeable layer including: a first dielectric material, and a metal layer which is disposed on the side of the first radiation-permeable layer facing away from the semiconductor layer sequence, wherein between the first radiat…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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