Optoelectronic semiconductor bodies having a reflective layer system

US9012940B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9012940-B2
Application numberUS-201013255341-A
CountryUS
Kind codeB2
Filing dateApr 26, 2010
Priority dateApr 30, 2009
Publication dateApr 21, 2015
Grant dateApr 21, 2015

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Abstract

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An optoelectronic semiconductor body ( 1 ) having an active semiconductor layer sequence ( 10 ) and a reflective layer system ( 20 ) is described. The reflective layer system ( 20 ) comprises a first radiation-permeable layer ( 21 ), which adjoins the semiconductor layer sequence ( 10 ), and a metal layer ( 23 ) on the side of the first radiation-permeable layer ( 21 ) facing away from the semiconductor layer sequence ( 10 ). The first radiation-permeable layer ( 21 ) contains a first dielectric material. Between the first radiation-permeable layer ( 21 ) and the metal layer ( 23 ) there is disposed a second radiation-permeable layer ( 22 ) which contains an adhesion-improving material. The metal layer ( 23 ) is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer ( 23 ) is improved in comparison with the adhesion on the first dielectric material.

First claim

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The invention claimed is: 1. Optoelectronic semiconductor body having: an active semiconductor layer sequence; and a reflective layer system including a first radiation-permeable layer adjoining the semiconductor layer sequence; the first radiation-permeable layer including: a first dielectric material, and a metal layer which is disposed on the side of the first radiation-permeable layer facing away from the semiconductor layer sequence, wherein between the first radiat…

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What does patent US9012940B2 cover?
An optoelectronic semiconductor body ( 1 ) having an active semiconductor layer sequence ( 10 ) and a reflective layer system ( 20 ) is described. The reflective layer system ( 20 ) comprises a first radiation-permeable layer ( 21 ), which adjoins the semiconductor layer sequence ( 10 ), and a metal layer ( 23 ) on the side of the first radiation-permeable layer ( 21 ) facing away from the semi…
Who is the assignee on this patent?
Walter Robert, Grolier Vincent, Schmal Michael, and 3 more
What technology area does this patent fall under?
Primary CPC classification H10F77/306. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).