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US-12183868-B2 · Dec 31, 2024 · US
N-type gallium-nitride layer having multiple conductive intervening layers
US9012939B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9012939-B2 |
| Application number | US-201113196828-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 2, 2011 |
| Priority date | Aug 2, 2011 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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Abstract
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A vertical GaN-based blue LED has an n-type layer comprising multiple conductive intervening layers. The n-type layer contains a plurality of periods. Each period of the n-type layer includes a gallium-nitride (GaN) sublayer and a thin conductive aluminum-gallium-nitride (AlGaN:Si) intervening sublayer. In one example, each GaN sublayer has a thickness substantially more than 100 nm and less than 1000 nm, and each AlGaN:Si intervening sublayer has a thickness less than 25 nm. The entire n-type layer is at least 2000 nm thick. The AlGaN:Si intervening layer provides compressive strain to the GaN sublayer thereby preventing cracking. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form a finished LED device. Because the AlGaN:Si sublayers are conductive, the entire n-type layer can remain as part of the finished LED device.
First claim
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What is claimed is: 1. A Light Emitting Diode (LED) device for emitting non-monochromatic light, the LED device comprising: an n-type layer that comprises a plurality of periods including a plurality of gallium-nitride (GaN) sublayers and a plurality of aluminum-gallium-nitride doped with silicon (AlGaN:Si) intervening sublayers, each of the AlGaN:Si intervening sublayers sandwiched by the gallium-nitride (GaN) sublayers, the gallium-nitride (GaN) sublayers located at top and bott…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9012939B2 cover?
- A vertical GaN-based blue LED has an n-type layer comprising multiple conductive intervening layers. The n-type layer contains a plurality of periods. Each period of the n-type layer includes a gallium-nitride (GaN) sublayer and a thin conductive aluminum-gallium-nitride (AlGaN:Si) intervening sublayer. In one example, each GaN sublayer has a thickness substantially more than 100 nm and less th…
- Who is the assignee on this patent?
- Chen Zhen, Fu Yi, Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10H20/825. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).