Thin film transistor, array substrate, and display apparatus

Patent metadata

Field	Value
Publication number	US-9012906-B2
Application number	US-201213688222-A
Country	US
Kind code	B2
Filing date	Nov 29, 2012
Priority date	Sep 21, 2012
Publication date	Apr 21, 2015
Grant date	Apr 21, 2015

Abstract

A thin film transistor disposed on a substrate is provided. The TFT includes a gate layer, an insulation layer, a carrier transmission layer, a passivation layer, a first source/drain layer, and a second source/drain layer. The gate layer is disposed on the substrate. The insulation layer is disposed on the gate layer. The carrier transmission layer is disposed on the insulation layer. The carrier transmission layer includes an active layer and a mobility enhancement layer. The passivation layer is disposed on the active layer. The first source/drain layer is disposed on the active layer. The second source/drain layer is disposed on the active layer. The mobility enhancement layer includes a first element. The active layer includes a second element. The electronegativity of the first element is smaller than that of the second element to enhance the carrier mobility of the active layer.

First claim

What is claimed is:

1. A thin film transistor adapted to be arranged on a substrate, the thin film transistor comprising:
a gate layer disposed on the substrate;
an insulation layer disposed on the gate layer;
a carrier transmission layer disposed on the insulation layer and comprising an active layer and a mobility enhancement layer;
a passivation layer disposed on the active layer;
a first source/drain layer disposed on the active layer and connected with the active laye…

Assignees

• E Ink Holdings Inc

Inventors

• Yeh Chia-Chun
• Tsai Xue-Hung
• Lin Po-Hsin

Classifications

• H10D30/6757

  Electricity · mapped topic

• H10H29/142

  Electricity · mapped topic

• H10D62/235

  Electricity · mapped topic

• H10D86/60

  Electricity · mapped topic

• H10D86/40

  Electricity · mapped topic