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Field effect transistor using graphene, phosphorus-doped graphene, and methods of producing the same
US9012889B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9012889-B2 |
| Application number | US-201313960996-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 7, 2013 |
| Priority date | Nov 28, 2012 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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Abstract
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A field effect transistor using a channel layer including a phosphorus-doped graphene and a method of fabricating the same are provided. Further, a phosphorus-doped graphene and a method of producing the same are provided. The field effect transistor includes: a source electrode and a drain electrode formed on a substrate; and a channel layer comprising a phosphorus-doped graphene, the channel layer electrically connected to the source electrode and the drain electrode.
First claim
Opening claim text (preview).
What is claimed is: 1. A field effect transistor, comprising: a source electrode and a drain electrode disposed on a substrate; and a channel layer comprising a phosphorus-doped graphene, the channel layer electrically connected to the source electrode and the drain electrode, wherein the phosphorus-doped graphene is doped by substitution at an oxygen-binding site of the graphene with phosphorus, wherein the channel layer comprises a double layer of graphene with phosphorus betw…
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- H10P95/92Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9012889B2 cover?
- A field effect transistor using a channel layer including a phosphorus-doped graphene and a method of fabricating the same are provided. Further, a phosphorus-doped graphene and a method of producing the same are provided. The field effect transistor includes: a source electrode and a drain electrode formed on a substrate; and a channel layer comprising a phosphorus-doped graphene, the channel …
- Who is the assignee on this patent?
- Univ Sungkyunkwan Res & Bus
- What technology area does this patent fall under?
- Primary CPC classification H10P95/92. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).