Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
Light-emitting semiconductor chip
US9012885B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9012885-B2 |
| Application number | US-201013518809-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 27, 2010 |
| Priority date | Dec 30, 2009 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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Abstract
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A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor chip comprising a semiconductor body with a semiconductor layer sequence, the semiconductor layer sequence comprising: an n-conductive multilayer structure, wherein a doping profile is formed in the n-conductive multilayer structure, the doping profile comprising at least one doping peak; a p-conductive semiconductor layer; and an active region provided for generating radiation, the active region arranged between the n-conductive mu…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10H20/812Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9012885B2 cover?
- A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
- Who is the assignee on this patent?
- Peter Matthias, Meyer Tobias, Walter Alexander, and 5 more
- What technology area does this patent fall under?
- Primary CPC classification H10H20/812. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).