Germanium antimony telluride materials and devices incorporating same

Patent metadata

Field	Value
Publication number	US-9012876-B2
Application number	US-201013637018-A
Country	US
Kind code	B2
Filing date	May 21, 2010
Priority date	Mar 26, 2010
Publication date	Apr 21, 2015
Grant date	Apr 21, 2015

Abstract

Germanium antimony telluride materials are described, e.g., material of the formula Ge x Sb y Te z C m N n , wherein x is about 0.1-0.6, y is about 0-0.7, z is about 0.2-0.9, m is about 0.02-0.20, and n is about 0.2-0.20. One specific composition includes from 0 to 50% Sb, from 50 to 80% Te, from 20 to 50% Ge, from 3 to 20% N and from 2 to 15% carbon, wherein all atomic percentages of all components of the film total to 100 atomic %. Another specific composition includes from 10 to 50% Sb, from 50 to 80% Te, from 10 to 50% Ge, from 3 to 20% N and from 3 to 20% carbon, and wherein all atomic percentages of all components of the film total to 100 atomic %. Material of such composition is useful to form phase change films, e.g., as conformally coated on a phase change memory device substrate to fabricate a phase change random access memory cell.

First claim

What is claimed is:

1. A chalcogenide germanium-antimony-tellurium material doped with carbon and nitrogen, wherein the amount of tellurium is greater than 50 at. %, wherein carbon is doped in said material at 2-20 at. %, and wherein nitrogen is doped in said material at 2-20 at. %.

2. A material according to claim 1 , wherein the amount of tellurium is at least an amount selected from the group consisting of:
55 at. % tellurium;
54.5% tellurium;
53.9% tel…

Assignees

• Zheng Jun-Fei
• Entegris Inc

Inventors

• Zheng Jun-Fei

Classifications

• C23C16/34

  Chemistry & Metallurgy · mapped topic

• H01L45/06

  Electricity · mapped topic

• C01B19/007

  Chemistry & Metallurgy · mapped topic

• H01L45/1233

  Electricity · mapped topic

• H01L45/00

  Electricity · mapped topic