Dielectric, capacitor, electrical circuit, circuit board, and apparatus
US-2024047137-A1 · Feb 8, 2024 · US
Metal-insualtor-metal (MIM) device and method of formation thereof
US9012299B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9012299-B2 |
| Application number | US-201414460205-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 14, 2014 |
| Priority date | Oct 30, 2007 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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Abstract
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In a method of fabricating a metal-insulator-metal (MIM) device, initially, a first electrode is provided. An oxide layer is provided on the first electrode, and a protective layer is provided on the oxide layer. An opening through the protective layer is provided to expose a portion of the oxide layer, and a portion of the first electrode underlying the exposed portion of the oxide layer is oxidized. A second electrode is provided in contact with the exposed portion of the oxide layer. In alternative embodiments, the initially provided oxide layer may be eliminated, and spacers of insulating material may be provided in the opening.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of fabricating a metal-insulator-metal (MIM) device comprising: providing a first electrode; providing an oxide layer on the first electrode; providing a protective layer on the oxide layer; providing an opening through the protective layer to expose a portion of the oxide layer; oxidizing a portion of the first electrode underlying the exposed portion of the oxide layer, wherein the oxide layer is not etched prior to the oxidizing; and pr…
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Frequently asked questions
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- What does patent US9012299B2 cover?
- In a method of fabricating a metal-insulator-metal (MIM) device, initially, a first electrode is provided. An oxide layer is provided on the first electrode, and a protective layer is provided on the oxide layer. An opening through the protective layer is provided to expose a portion of the oxide layer, and a portion of the first electrode underlying the exposed portion of the oxide layer is ox…
- Who is the assignee on this patent?
- Spansion Llc
- What technology area does this patent fall under?
- Primary CPC classification H01G4/10. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).