Capacitor and semiconductor device including the same
US-2024387608-A1 · Nov 21, 2024 · US
US9012297B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9012297-B2 |
| Application number | US-87686610-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 7, 2010 |
| Priority date | Dec 21, 2007 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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Structures and methods of forming moisture barrier capacitor on a semiconductor component are disclosed. The capacitor is located on the periphery of a semiconductor chip and includes an inner plate electrically connected to a voltage node, an outer plate with fins for electrically connecting to a different voltage node.
Opening claim text (preview).
What is claimed is: 1. A method of forming a moisture barrier capacitor, the method comprising: forming an outer plate and an inner plate of the moisture barrier capacitor, the capacitor disposed on a periphery of a chip edge; forming electrical connections to the outer plate of the capacitor to an active circuitry through a upper layer not porous to moisture, wherein the outer plate is electrically connected by fins, wherein at least a portion of the fins are disposed above the…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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