Methods of forming FinFET semiconductor devices so as to tune the threshold voltage of such devices

Patent metadata

Field	Value
Publication number	US-9012286-B2
Application number	US-201213445428-A
Country	US
Kind code	B2
Filing date	Apr 12, 2012
Priority date	Apr 12, 2012
Publication date	Apr 21, 2015
Grant date	Apr 21, 2015

Abstract

Disclosed herein are various methods of forming FinFET semiconductor devices so as to tune the threshold voltage of such devices. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate to define at least one fin (or fins) for the device, prior to forming a gate structure above the fin (or fins), performing a first epitaxial growth process to grow a first semiconductor material on exposed portions of the fin (or fins) and forming the gate structure above the first semiconductor material on the fin (or fins).

First claim

What is claimed:

1. A method of forming a FinFET device, comprising:
forming a plurality of spaced-apart trenches in a semiconducting substrate, said trenches defining at least one fin comprised of said semiconducting substrate for said device;
forming a layer of insulating material in said trenches, wherein an upper portion of said at least one fin extends above an upper surface of said layer of insulating material so as to expose all sidewall surfaces and an entirety of a top…

Assignees

• Chi Min-Hwa
• Globalfoundries Inc

Inventors

• Chi Min-Hwa

Classifications

• H10D30/751

  Electricity · mapped topic

• H10D30/0245

  Electricity · mapped topic

• H10D84/0193 Primary

  Electricity · mapped topic

• H10D84/038 Primary

  Electricity · mapped topic

• H01L21/823821 Primary

  Electricity · mapped topic