Chemically amplified positive resist composition and resist pattern forming process
US-12164231-B2 · Dec 10, 2024 · US
Resist composition and method of forming resist pattern
US9012125B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9012125-B2 |
| Application number | US-201213343481-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 4, 2012 |
| Priority date | Jan 26, 2011 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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Abstract
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A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A). In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and R 1 represents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.
First claim
Opening claim text (preview).
What is claimed is: 1. A resist composition comprising: a base component (A) which exhibits changed solubility in a developing solution under action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as an exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) comprising at least one member selected from the group consisting of s…
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Physics · mapped topic
Physics · mapped topic
- G03F7/0045Primary
Physics · mapped topic
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Frequently asked questions
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- What does patent US9012125B2 cover?
- A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) repre…
- Who is the assignee on this patent?
- Kumada Shinji, Maemori Satoshi, Arai Masatoshi, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification G03F7/0045. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).