Gas-barrier multilayer film

Patent metadata

Field	Value
Publication number	US-9011994-B2
Application number	US-201013263278-A
Country	US
Kind code	B2
Filing date	Apr 8, 2010
Priority date	Apr 9, 2009
Publication date	Apr 21, 2015
Grant date	Apr 21, 2015

Abstract

A gas-barrier multilayer film including:
a base member; and at least one thin film layer formed on at least one surface of the base member, wherein at least one layer of the thin film layer(s) satisfies at least one of requirements (A) and (B).

First claim

The invention claimed is:

1. A gas-barrier multilayer film comprising:
a base member; and
at least one thin film layer formed on at least one surface of the base member, wherein
at least one layer of the thin film layer(s) satisfies the following requirement (A):

[Requirement (A)]
the layer contains silicon, oxygen, and carbon, and
in a silicon distribution curve, an oxygen distribution curve, and a carbon distribution curve all the following requirements (i) to (iii) are satisfied, each of the silicon distribution curve, the oxygen distribution curve, and the carbon distribution curve representing the relationship between the distance from a surface of the layer in the film thickness direction of the layer and corresponding one of the ratio of the amount of silicon atoms to the total amount of silicon atoms, oxygen atoms, and carbon atoms (the atomic ratio of silicon), the ratio of the amount of oxygen atoms to said total amount (the atomic ratio of oxygen), and the ratio of the amount of carbon atoms to said total amount (the atomic ratio of carbon):
(i) the atomic ratio of silicon, the atomic ratio of oxygen, and the atomic ratio of carbon satisfy, in any region corresponding to 90% or more of the thickness of the layer, a requirement represented by the following formula (1):
(atomic ratio of oxygen)>(atomic ratio of silicon)>(atomic ratio of carbon)  (1),

the atomic ratio of the content of silicon atoms to the total amount of silicon atoms, oxygen atoms and carbon atoms is 30 to 40 at % in any region corresponding to 90% or more of the thickness of the layer,
the atomic ratio of the content of oxygen atoms to the total amount of silicon atoms, oxygen atoms and carbon atoms is 45 to 67 at % in any region corresponding to 90% or more of the thickness of the layer, and
the atomic ratio of the content of carbon atoms to the total amount of silicon atoms, oxygen atoms and carbon atoms is 3 to 25 at % in any region corresponding to 90% or more of the thickness of the layer; and
(ii) the carbon distribution curve has at least one extremum; and
(iii) the absolute value of the difference between the maximum value and the minimum value of the atomic ratio of carbon in the carbon distribution curve is 5 at % or greater,

wherein the at least one extremum of the carbon distribution curve is a local maximum or a local minimum of the atomic ratio of carbon with respect to the distance from a surface of the thin film layer in the film thickness direction of the thin film layer,
the local maximum is a point at which change of the value of the atomic ratio of carbon turns from increase to decrease when the distance from the surface of the thin film layer is changed and the value of the atomic ratio of carbon decreases by 3 at % or more in comparison to the value of the atomic ratio of carbon at a point when the distance from the surface of the thin film layer in the film thickness direction of the thin film layer is further changed by 20 nm, and
the local minimum is a point at which the change of the value of the atomic ratio of carbon turns from decrease to increase when the distance from the surface of the thin film layer is changed and the value of the atomic ratio of carbon increases by 3 at % or more in comparison to the value of the atomic ratio of carbon at a point when the distance from the surface of the thin film layer in the film thickness direction of the thin film layer is further changed by 20 nm.

2. The gas-barrier multilayer film according to claim 1 , wherein
the carbon distribution curve of said at least one layer of the thin film layer(s) is substantially continuous.

3. The gas-barrier multilayer film according to claim 1 , wherein
the oxygen distribution curve of said at least one layer of the thin film layer(s) has at least one extremum.

4. The gas-barrier multilayer film according to claim 1 , wherein
the absolute value of the difference between the maximum value and the minimum value of the atomic ratio of oxygen in the oxygen distribution curve of said at least one layer of the thin film layer(s) is 5 at % or greater.

5. The gas-barrier multilayer film according to claim 1 , wherein
the absolute value of the difference between the maximum value and the minimum value of the atomic ratio of silicon in the silicon distribution curve of said at least one layer of the thin film layer(s) is smaller than 5 at %.

6. The gas-barrier multilayer film according to claim 1 , wherein
the absolute value of the difference between the maximum value and the minimum value of the total atomic ratio of oxygen and carbon in an oxygen-carbon distribution curve is smaller than 5 at %, the oxygen-carbon distribution curve representing the relationship between the distance from the surface in the film thickness direction of said at least one layer of the thin film layer(s) and the ratio of the total amount of oxygen atoms and carbon atoms to the total amount of silicon atoms, oxygen atoms, and carbon atoms (the atomic ratio of oxygen and carbon).

7. The gas-barrier multilayer film according to claim 1 , wherein
the carbon distribution curve of said at least one layer of the thin film layer(s) has at least three extrema.

8. The gas-barrier multilayer film according to claim 1 , wherein
the carbon distribution curve of said at least one layer of the thin film layer(s) has at least three extrema, and
the absolute value of the difference in distance from the surface of the thin film layer in the film thickness direction of the thin film layer between each of the extrema of the carbon distribution curve and any one of the extrema adjacent to the former one is 200 nm or less.

9. The gas-barrier multilayer film according to claim 1 , wherein
the oxygen distribution curve of said at least one layer of the thin film layer(s) has at least three extrema.

10. The gas-barrier multilayer film according to claim 1 , wherein
the oxygen distribution curve of said at least one layer of the thin film layer(s) has at least three extrema, and
the absolute value of the difference in distance from the surface of the thin film layer in the film thickness direction of the thin film layer between each of the extrema of the oxygen distribution curve and any one of the extrema adjacent to the former one is 200 nm or less.

11. The gas-barrier multilayer film according to claim 1 , wherein
said at least one layer of the thin film layer(s) further satisfies the following requirement (B):

[Requirement (B)]
an electron beam transmittance curve has at least one extremum, the electron beam transmittance curve representing the relationship between the distance from a surface of the layer in the film thickness direction of the layer and the electron beam transmittance; and
the electron beam transmittance curve of said layer is substantially continuous.

12. The gas-barrier multilayer film according to claim 1 , wherein
said at least one layer of the thin film layer(s) further satisfies the following requirement (B):

[Requirement (B)]
an electron beam transmittance curve has at least one extremum, the electron beam transmittance curve representing the relationship between the distance from a surface of the layer in the film thickness direction of the layer and the electron beam transmittance; and
the electron beam transmittance curve of said layer has at least three extrema.

13. The gas-barrier multilayer film according to claim 1 , wherein
said at least one layer of the thin film layer(s) further satisfies the following requirement (B):

[Requirement (B)]
an electron beam transmittance curve has at least one extremum, the e

Assignees

• Hasegawa Akira
• Kuroda Toshiya
• Ishitobi Masamitsu
• Sanada Takashi
• Tanaka Toshihiko
• Sumitomo Chemical Co

Inventors

• Hasegawa Akira
• Kuroda Toshiya
• Ishitobi Masamitsu
• Sanada Takashi
• Tanaka Toshihiko

Classifications

• H10K59/873

  Encapsulations · CPC title

• B32B27/06

  as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a layer of a particular substance B32B9/045; next to a bituminous or tarry layer B32B11/046; next to a water setting substance layer B32B13/12; next to a metal layer B32B15/08; next to a glass layer B32B17/10; next to a layer formed of natural mineral fibres or particles B32B19/045; next to a wood layer B32B21/08; next to a cellulosic plastic layer B32B23/08; next to a natural or synthetic rubber layer B32B25/08)} · CPC title

• H10F10/00

  Individual photovoltaic cells, e.g. solar cells (electrolytic light-sensitive devices, e.g. dye-sensitised solar cells, H01G9/20) · CPC title

• G02F1/1333

  Constructional arrangements; {Manufacturing methods}(G02F1/135, G02F1/136 take precedence) · CPC title

• B32B9/00

  Layered products comprising a {layer of a} particular substance not covered by groups B32B11/00 - B32B29/00 · CPC title