Electrode active material precursor, method for preparing the same, electrode active material, and battery
US-2024079551-A1 · Mar 7, 2024 · US
Alteration of graphene defects
US9011968B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9011968-B2 |
| Application number | US-201113391158-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 16, 2011 |
| Priority date | Sep 16, 2011 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Technologies are generally described for method and systems effective to at least partially alter a defect in a layer including graphene. In some examples, the methods may include receiving the layer on a substrate where the layer includes at least some graphene and at least some defect areas in the graphene. The defect areas may reveal exposed areas of the substrate. The methods may also include reacting the substrate under sufficient reaction conditions to produce at least one cationic area in at least one of the exposed areas. The methods may further include adhering graphene oxide to the at least one cationic area to produce a graphene oxide layer. The methods may further include reducing the graphene oxide layer to produce at least one altered defect area in the layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for at least partially altering a defect area in a layer on a substrate, wherein the layer includes graphene, the method comprising: placing the layer on the substrate in a chamber, wherein the layer includes at least some defect areas in the graphene, the defect areas revealing exposed areas of the substrate; reacting the substrate under sufficient reaction conditions to produce at least one cationic area in at least one of the exposed areas; a…
Assignees
Inventors
Classifications
Chemistry & Metallurgy · mapped topic
Operations & Transport · mapped topic
Chemistry & Metallurgy · mapped topic
- C01B32/168Primary
Chemistry & Metallurgy · mapped topic
Operations & Transport · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9011968B2 cover?
- Technologies are generally described for method and systems effective to at least partially alter a defect in a layer including graphene. In some examples, the methods may include receiving the layer on a substrate where the layer includes at least some graphene and at least some defect areas in the graphene. The defect areas may reveal exposed areas of the substrate. The methods may also inclu…
- Who is the assignee on this patent?
- Miller Seth, Yager Thomas, Empire Technology Dev Llc
- What technology area does this patent fall under?
- Primary CPC classification C01B32/168. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).