Light-emitting device and electronic device using the same

Patent metadata

Field	Value
Publication number	US-9006965-B2
Application number	US-201414169553-A
Country	US
Kind code	B2
Filing date	Jan 31, 2014
Priority date	Jul 10, 2008
Publication date	Apr 14, 2015
Grant date	Apr 14, 2015

Abstract

A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor.

First claim

What is claimed is:

1. A light-emitting device comprising:
a transistor over a substrate;
a color filter over the transistor;
a light-emitting element over the color filter; and
a resin film over the light-emitting element,
wherein the transistor and the color filter overlap each other in a vertical direction,
wherein a channel formation region of the transistor comprises an oxide semiconductor layer, and
wherein the transistor and the light-emitting element are sealed by the resin film and the substrate.

2. The light-emitting device according to claim 1 , further comprising an adhesive between the substrate and the transistor,
wherein the substrate comprises an organic resin.

3. The light-emitting device according to claim 1 ,
wherein the transistor comprises a gate insulating film, and
wherein the gate insulating film comprises a silicon nitride film and a silicon oxide film.

4. The light-emitting device according to claim 1 ,
wherein the light-emitting element emits light with white color.

5. The light-emitting device according to claim 1 ,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

6. The light-emitting device according to claim 1 ,
wherein the light-emitting device is configured to emit light from the light-emitting element through the substrate.

7. The light-emitting device according to claim 1 ,
wherein the transistor, the color filter, and the substrate overlap each other in the vertical direction.

8. The light-emitting device according to claim 1 ,
wherein the substrate has flexibility.

9. A light-emitting device comprising:
a transistor over a substrate;
a color filter over the transistor;
a light-emitting element over the color filter; and
a resin film over the light-emitting element,
wherein the transistor and the color filter overlap each other in a vertical direction,
wherein a channel formation region of the transistor comprises an oxide semiconductor layer,
wherein the transistor and the light-emitting element are sealed by the resin film and the substrate, and
wherein the light-emitting element comprises:
a first EL layer over a first electrode;
a charge generation layer over the first EL layer;
a second EL layer over the charge generation layer; and
a second electrode over the second EL layer.

10. The light-emitting device according to claim 9 , further comprising an adhesive between the substrate and the transistor,
wherein the substrate comprises an organic resin.

11. The light-emitting device according to claim 9 ,
wherein the transistor comprises a gate insulating film, and
wherein the gate insulating film comprises a silicon nitride film and a silicon oxide film.

12. The light-emitting device according to claim 9 ,
wherein the light-emitting element emits light with white color.

13. The light-emitting device according to claim 9 ,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

14. The light-emitting device according to claim 9 ,
wherein the light-emitting device is configured to emit light from the light-emitting element through the substrate.

15. The light-emitting device according to claim 9 ,
wherein the first electrode has light-transmitting ability and is electrically connected to the transistor.

16. The light-emitting device according to claim 9 ,
wherein the transistor, the color filter, and the substrate overlap each other in the vertical direction.

17. The light-emitting device according to claim 9 ,
wherein the substrate has flexibility.

Assignees

• Semiconductor Energy Lab

Inventors

• Seo Satoshi
• Hatano Kaoru

Classifications

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/423 Primary

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D86/0214

  using temporary substrates · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title