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Semiconductor devices having through silicon vias and methods of fabricating the same
US9006902B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9006902-B2 |
| Application number | US-201414161034-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 22, 2014 |
| Priority date | Feb 6, 2013 |
| Publication date | Apr 14, 2015 |
| Grant date | Apr 14, 2015 |
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Abstract
Official abstract text for this publication.
A semiconductor device is provided having an insulating layer on a semiconductor substrate. The insulating layer and the semiconductor substrate define a through hole penetrating the semiconductor substrate and the insulating layer. A through electrode is provided in the through hole. A spacer is provided between the semiconductor substrate and the through electrode. An interconnection in continuity with the through electrode is provided on the insulating layer. A barrier layer covering a side and a bottom of the interconnection and a side of the through electrode is provided and the barrier layer is formed in one body.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a first insulating layer on a semiconductor substrate, the first insulating layer and the semiconductor substrate defining a through hole; a through electrode in the through hole; a spacer between the semiconductor substrate and the through electrode; an interconnection on the first insulating layer and in continuity with the through electrode; a barrier layer covering a side and a bottom surface of the interconnec…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9006902B2 cover?
- A semiconductor device is provided having an insulating layer on a semiconductor substrate. The insulating layer and the semiconductor substrate define a through hole penetrating the semiconductor substrate and the insulating layer. A through electrode is provided in the through hole. A spacer is provided between the semiconductor substrate and the through electrode. An interconnection in conti…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10W20/01. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 14 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).