Middle-of-the-line constructs using diffusion contact structures

Patent metadata

Field	Value
Publication number	US-9006100-B2
Application number	US-201213568737-A
Country	US
Kind code	B2
Filing date	Aug 7, 2012
Priority date	Aug 7, 2012
Publication date	Apr 14, 2015
Grant date	Apr 14, 2015

Abstract

An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions.

First claim

What is claimed is:

1. A method comprising:
providing a first diffusion region in a substrate;
providing at least one metal1 (M1) layer of the substrate;
providing, via a first lithography process, a first diffusion contact structure, the first diffusion contact structure being separated from the at least one metal1 (M1) layer of the substrate;
providing, via a second lithography process, a second diffusion contact structure, wherein the first and second lithography processes are performed at different times; and
coupling, via a double patterning technique, the first diffusion contact structure to the first diffusion region and the second diffusion contact structure, wherein the coupling of the first diffusion contact structure to the second diffusion contact structure comprises stitching the first and second diffusion contact structures, the stitching comprising providing the first and second diffusion contact structures to include an overlapping area of the first and second diffusion contact structures, and the overlapping area, in a plan view, covers less than all of the first and less than all of the second diffusion contact structures.

2. The method according to claim 1 , further comprising:
providing a second diffusion region in the substrate;
providing, via the first lithography process, a third diffusion contact structure; and
coupling the third diffusion contact structure to the second diffusion region and the second diffusion contact structure.

3. The method according to claim 1 , further comprising:
providing the first diffusion contact structure to have a first width, and the second diffusion contact structure to have a second width that is different from the first width.

4. The method according to claim 1 , further comprising:
providing a first gate structure over the substrate; and
providing the second diffusion contact structure over the first gate structure.

5. The method according to claim 4 , further comprising:
providing a second gate structure over the substrate;
providing a gate contact over the second gate structure; and
providing the second diffusion contact structure to be a pre-designated distance away from the gate contact.

6. The method according to claim 4 , further comprising:
providing a gate contact over the first gate structure; and
coupling the second diffusion contact structure to the gate contact.

7. The method according to claim 6 , further comprising:
providing a second gate structure over the substrate; and
providing the second diffusion contact structure across the second gate structure to couple the first diffusion contact structure to the gate contact.

8. A method comprising:
providing a first diffusion region in a substrate;
providing at least one metal1 (M1) layer of the substrate;
providing a plurality of fin structures over the first diffusion region;
providing first, second, and third diffusion contact structures, the first diffusion contact structure coupled to the first diffusion region, and the third diffusion contact structure coupled to a second diffusion region in the substrate;
providing the second diffusion contact structure over at least one of the fin structures, and overlapping the first and third diffusion contact structures, the second diffusion contact structure being separated from the at least one metal1 (M1) layer of the substrate;
coupling, via a double patterning technique, the second diffusion contact structure to the first diffusion region via the first diffusion contact structure;
providing a diffusion gap region between the first and second diffusion regions;
providing the second diffusion contact structure over the diffusion gap region; and
coupling, via the second diffusion contact structure, the first and second diffusion regions by stitching the second diffusion contact structure to the first and third diffusion contact structures,
wherein a portion of the second diffusion contact structure maintains a predefined distance from a gate contact,
wherein the first and second diffusion contact structures include an overlapping area of the first and second diffusion contact structures, and the overlapping area of the first and second diffusion contact structures, in a plan view, covers less than all of the first and less than all of the second diffusion contact structures, and
wherein the second and third diffusion contact structures include an overlapping area of the second and third diffusion contact structures, and the overlapping area of the second and third diffusion contact structures, in a plan view, covers less than all of the second and less than all of the third diffusion contact structures.

9. The method according to claim 8 , further comprising:
providing a gate structure over the substrate;
providing the gate contact over the gate structure; and
coupling the diffusion contact structure to the gate contact.

10. The method according to claim 9 , wherein the diffusion contact structure is oriented perpendicularly to the gate contact.

11. The method according to claim 1 , wherein the double patterning technique comprises a Litho-Etch-Litho-Etch (LELE) technique.

12. The method according to claim 1 , wherein the coupling comprises connecting drains of NFETs to drains of PFETs.

13. The method according to claim 2 , wherein the second diffusion contact structure overlaps both the first diffusion contact structure and the third diffusion contact structure, and the overlapping area of the second diffusion contact structure and the third diffusion contact structure covers less than all of the second and third diffusion contact structures.

14. The method according to claim 13 , wherein the second diffusion contact structure has a width different from the first diffusion contact structure and the third diffusion contact structure.

Assignees

• Rashed Mahbub
• Ma Yuansheng
• Lin Irene
• Stephens Jason
• Deng Yunfei
• Lei Yuan
• Kye Jongwook
• Augur Rod
• Ahmed Shibly
• Kengeri Subramani
• Venkatesan Suresh
• Globalfoundries Inc

Inventors

• Rashed Mahbub
• Ma Yuansheng
• Lin Irene
• Stephens Jason
• Deng Yunfei
• Lei Yuan
• Kye Jongwook
• Augur Rod
• Ahmed Shibly
• Kengeri Subramani
• Venkatesan Suresh

Classifications

• H10W70/635

  Through-vias · CPC title

• H10W20/0698

  Local interconnections · CPC title

• H10W70/611

  for connecting multiple chips together · CPC title

• H10W70/65 Primary

  Shapes or dispositions of interconnections · CPC title

• H10D89/10

  Integrated device layouts · CPC title